ATF-33143-TR1G datasheet(7/17 Pages) AVAGO

Part #	ATF-33143-TR1G

Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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Manufacturer	AVAGO [AVAGO TECHNOLOGIES LIMITED]

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7

Notes:

1. Measurements made on ATN LP1 power load pull system.

2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending

on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in

higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done

with active biasing.

3. PAE (%) = ((Pout – Pin) / Pdc) X 100

4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.

ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA

Freq

P1dB

Id

G1dB

PAE1dB

P3dB

Id

PAE3dB

Out_mag

Out_ang

(GHz)

(dBm)

(mA)

(dB)

(%)

(dBm)

(mA)

(%)

(Mag.)

(°)

0.9

20.7

89

23.2

33

23.2

102

51

0.39

160

1.5

21.2

91

20.7

36

23.8

116

51

0.43

165

1.8

21.1

80

19.2

40

23.0

94

52

0.43

170

2.0

21.6

81

18.1

44

23.2

89

57

0.42

174

4.0

23.0

97

11.9

48

24.6

135

48

0.40

-150

6.0

24.0

130

5.9

36

25.2

136

36

0.37

-124

Pin (dBm)

Figure 20. Swept Power Tuned for Max P1dB

VDS =4V, IDSQ = 80 mA, 2 GHz.

70

60

50

40

30

20

10

0

-10

-20

-40

-30

-10

-20

10

20

0

Pout

Gain

PAE

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ATF-33143-TR1G Datasheet(PDF) 7 Page - AVAGO TECHNOLOGIES LIMITED

ATF-33143-TR1G Datasheet(HTML) 7 Page - AVAGO TECHNOLOGIES LIMITED

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