NGTG50N60FLWG datasheet(1/9 Pages) ONSEMI

Part #	NGTG50N60FLWG

Description	Insulated Gate Bipolar Transistor (IGBT)

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2012 − Rev. 0

1

Publication Order Number:

NGTG50N60FLW/D

NGTG50N60FLWG

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Trench construction, and provides superior performance

in demanding switching applications, offering both low on state

voltage and minimal switching loss.

Features

• Low Saturation Voltage using Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Optimized for High Speed Switching

• 5 ms Short−Circuit Capability

• These are Pb−Free Devices

Typical Applications

• Power Factor Correction

• Solar Inverters

• Uninterruptable Power Supply (UPS)

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage

VCES

600

V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

100

50

A

Pulsed collector current, Tpulse

limited by TJmax

ICM

200

A

Short−circuit withstand time

VGE = 15 V, VCE = 400 V,

TJ ≤ +150°C

tSC

5

ms

Gate−emitter voltage

VGE

$20

V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD

223

89

W

Operating junction temperature

range

TJ

−55 to +150

°C

Storage temperature range

Tstg

−55 to +150

°C

Lead temperature for soldering, 1/8”

from case for 5 seconds

TSLD

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

TO−247

CASE 340L

STYLE 4

C

G

50 A, 600 V

VCEsat = 1.65 V

E

Device

Package

Shipping

ORDERING INFORMATION

NGTG50N60FLWG

TO−247

(Pb−Free)

30 Units / Rail

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING DIAGRAM

G50N60FL

AYWWG

G

E

C

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