NDD01N60, NDT01N60

http://onsemi.com

2

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

600

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

660

mV/°C

Drain−to−Source Leakage Current

1

mA

50

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

2.2

3.3

3.7

V

Negative Threshold Temperature Coef-

ficient

7.0

mV/°C

Static Drain-to-Source On Resistance

8.0

8.5

W

Forward Transconductance

0.9

S

CHARGES, CAPACITANCES & GATE RESISTANCES

Input Capacitance (Note 7)

160

pF

Output Capacitance (Note 7)

22

Reverse Transfer Capacitance (Note 7)

4.0

Total Gate Charge (Note 7)

7.2

nC

Gate-to-Source Charge (Note 7)

1.2

Gate-to-Drain Charge (Note 7)

3.1

Plateau Voltage

4.5

V

Gate Resistance

6.7

W

SWITCHING CHARACTERISTICS (Note 8)

Turn-on Delay Time

8.0

ns

Rise Time

5.1

Turn-off Delay Time

16.5

Fall Time

21.3

DRAIN−SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

0.78

1.6

V

0.63

Reverse Recovery Time

179

ns

Charge Time

37

Discharge Time

141

Reverse Recovery Charge

288

nC

6. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

7. Guaranteed by design.

8. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device

Package

NDD01N60−1G

IPAK

(Pb-Free, Halogen-Free)

75 Units / Rail

NDD01N60T4G

DPAK

(Pb-Free, Halogen-Free)

2500 / Tape & Reel

NDT01N60T1G

SOT−223

(Pb-Free, Halogen-Free)

1000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.