DTS1003 datasheet(1/8 Pages) DINTEK

Part #	DTS1003

Description	P-Channel 100-V (D-S) MOSFET Halogen-free

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

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1

P-Channel 1

00-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

Ultra Low On-Resistance

•

Small Size

APPLICATIONS

•

Active Clamp Circuits in DC/DC Power Supplies

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 1

00

1.2 at VGS = - 10 V

- 0.69

7.7

1.3 at VGS = - 6.0 V

- 0.66

DTS1003

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Pulse width limited by maximum junction temperature.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

-

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a, b

TA = 25 °C

ID

- 0.69

- 0.53

A

TA = 70 °C

- 0.55

- 0.43

Pulsed Drain Current

IDM

- 1.6

Continuous Source Current (Diode Conduction)a, b

IS

- 1.0

- 0.6

Single Pulse Avalanche Current

L = 1.0 mH

IAS

4.5

Single Pulse Avalanche Energy

EAS

1.01

mJ

Maximum Power Dissipationa, b

TA = 25 °C

PD

1.25

0.75

W

TA = 70 °C

0.8

0.48

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

75

100

°C/W

Steady State

120

166

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

50

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