Electronic Components Datasheet Search |
|
DTP9531 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd |
|
DTP9531 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd |
2 / 7 page 2 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 24 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 6 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.2 - 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 150 µA VDS = 0 V, VGS = ± 20 V ± 15 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS - 10 V, ID = - 13 A 0.0054 0.0078 VGS - 6 V, ID = - 10 A 0.0068 0.0082 VGS - 4.5 V, ID = - 8 A 0.0083 0.0092 Forward Transconductancea gfs VDS = - 15 V, ID = - 13 A 44 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 4620 pF Output Capacitance Coss 880 Reverse Transfer Capacitance Crss 820 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 17.3 A 102 153 nC VDS = - 15 V, VGS = - 5 V, ID = - 17.3 A 66 80 Gate-Source Charge Qgs 16 Gate-Drain Charge Qgd 28 Gate Resistance Rg f = 1 MHz 0.3 1.3 2.6 Turn-On Delay Time td(on) VDD = 0 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 70 105 ns Rise Time tr 70 105 Turn-Off Delay Time td(off) 45 68 Fall Time tf 27 41 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 18 30 Rise Time tr 15 25 Turn-Off Delay Time td(off) 52 80 Fall Time tf 14 25 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 5.8 A Pulse Diode Forward Current ISM - 60 Body Diode Voltage VSD IS = - 10 A, VGS = 0 V - 0.78 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 35 53 ns Body Diode Reverse Recovery Charge Qrr 25 38 nC Reverse Recovery Fall Time ta 19 ns Reverse Recovery Rise Time tb 16 www.din-tek.jp DTP9531 |
Similar Part No. - DTP9531 |
|
Similar Description - DTP9531 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |