DTL9604_13 datasheet(4/8 Pages) DINTEK

Part #	DTL9604

Description	N-Channel 60 V (D-S) MOSFET Low Qg for High Efficiency

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.003

0.006

0.009

0.012

0.015

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 20 A

0

40

80

120

160

200

0.001

0.01

0.1

1

10

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

I

DM Limited

T

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

DC

I

D Limited

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DTL9604

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DTL9604 Datasheet(PDF) 4 Page - DinTek Semiconductor Co,.Ltd

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