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DTP2N60 Datasheet(PDF) 2 Page - DinTek Semiconductor Co,.Ltd

Part # DTP2N60
Description  Power MOSFET Available in Tape and Reel
Download  11 Pages
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Manufacturer  DINTEK [DinTek Semiconductor Co,.Ltd]
Direct Link  http://www.daysemi.jp/
Logo DINTEK - DinTek Semiconductor Co,.Ltd

DTP2N60 Datasheet(HTML) 2 Page - DinTek Semiconductor Co,.Ltd

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2
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
--
50
Maximum Junction-to-Case (Drain)
RthJC
--
3.0
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.88
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
100
μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 1.2 Ab
--
3.9
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 1.2 A
1.4
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
-
350
-
pF
Output Capacitance
Coss
-48
-
Reverse Transfer Capacitance
Crss
-8.6
-
Total Gate Charge
Qg
VGS = 10 V
ID = 2.0 A, VDS = 360 V,
see fig. 6 and 13b
--
18
nC
Gate-Source Charge
Qgs
--
3.0
Gate-Drain Charge
Qgd
--
8.9
Turn-On Delay Time
td(on)
VDD = 300 V, ID = 2.0 A,
Rg = 18 Ω, RD = 135 Ω, see fig. 10b
-10
-
ns
Rise Time
tr
-23
-
Turn-Off Delay Time
td(off)
-30
-
Fall Time
tf
-25
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
2.0
A
Pulsed Diode Forward Currenta
ISM
--
8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb
-
290
580
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.67
1.3
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
DTL2N60/DTP2N60/DTU2N60
www.din-tek.jp


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