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JS28F640J3C115 Datasheet(PDF) 1 Page - Intel Corporation |
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JS28F640J3C115 Datasheet(HTML) 1 Page - Intel Corporation |
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1 / 72 page  Intel StrataFlash® Memory (J3) 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash ® Memory (J3) device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256- Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit- per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future devices. Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components are ideal for code and data applications where high density and low cost are required. Examples include networking, telecommunications, digital set top boxes, audio recording, and digital imaging. By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash ® memory (28F640J5 and 28F320J5) devices. J3 memory components deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Intel StrataFlash ® memory devices. Manufactured on Intel® 0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device provides the highest levels of quality and reliability. ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffer —6.8 µs per byte effective programming time ■ Software — Program and Erase suspend support — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible ■ Security — 128-bit Protection Register —64-bit Unique Device Identifier —64-bit User Programmable OTP Cells — Absolute Protection with VPEN = GND — Individual Block Locking — Block Erase/Program Lockout during Power Transitions ■ Architecture — Multi-Level Cell Technology: High Density at Low Cost — High-Density Symmetrical 128-Kbyte Blocks —256 Mbit (256 Blocks) (0.18µm only) —128 Mbit (128 Blocks) — 64 Mbit (64 Blocks) —32 Mbit (32 Blocks) ■ Quality and Reliability — Operating Temperature: -40 °C to +85 °C — 100K Minimum Erase Cycles per Block — 0.18 µm ETOX™ VII Process (J3C) — 0.25 µm ETOX™ VI Process (J3A) ■ Packaging and Voltage — 56-Lead TSOP Package — 64-Ball Intel® Easy BGA Package — Lead-free packages available — 48-Ball Intel® VF BGA Package (32 and 64 Mbit) (x16 only) —VCC = 2.7 V to 3.6 V —VCCQ = 2.7 V to 3.6 V Order Number: 290667-020 November 2004 Notice: This document contains information on new products in production. The specifications are subject to change without notice. Verify with your local Intel sales office that you have the latest datasheet before finalizing a design. |
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