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STI5N52U Datasheet(PDF) 4 Page - STMicroelectronics |
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STI5N52U Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STD5N52U, STF5N52U, STI5N52U 4/18 Doc ID 15684 Rev 2 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS = 0) ID = 1 mA 525 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 525 V VDS = 525 V, TC=125 °C 10 500 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.2 A 1.28 1.5 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 529 71 13.4 - pF pF pF Co(tr) (1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VDS = 0 to 420 V, VGS = 0 - 11 - pF Rg Gate input resistance f=1 MHz open drain - 6 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 416 V, ID = 4.4 A, VGS = 10 V (see Figure 17) - 16.9 4.2 8.4 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 260 V, ID = 2.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) - 11.4 13.6 23.1 15 - ns ns ns ns |
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