2.0 mm x 2.5 mm Ceramic Package SMD TCXO

I583/I783 Series

11/07/12_B

Specifications subject to change without notice

Page 1

2.50+/- 0.2

2.0+/-0.2

1.1 Max.

1

2

4

3

4

1

3

2

Pin Connection

1

Vcontrol / N.C.

2

GND

3

Output

4

Vcc

Dimension Units: mm

0.6

0.5

Recommended Pad Layout

0.10

0.10

0.6

3

4

2

1

No pattern area

1.4

2.3

2.80

Product Features:

Applications:

Low Current Consumption

Server & Storage

Ultra Miniature Package

CDMA/WCDMA

RoHS Compliant

802.11 / Wifi

Compatible with Leadfree Processing

T1/E1, T3/E3

NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 4) and GND (pin 2) to minimize power supply noise.

** Not available for all temperature ranges.

Frequency

(Contact Sales Channel for other available frequencies)

Output Level

Clipped Sinewave

0.8 V p-p Min.

Output Load

Clipped Sinewave

10K Ohms / 10 pF

Frequency Stability

Vs Temperature

Vs Voltage

Vs Load(5%)

See Frequency Stability Table

 0.2 ppm Max.

.0.2 ppm Max.

Aging

 1 ppm / Year Max.

Supply Voltage

See Supply Voltage Table , tolerance

 5%

Current

2.0 mA Max.

Voltage Control (I783)

1.5 VDC

 1.0 VDC,  5.0 ppm Min. (Custom Available)

Operating

See Operating Temperature Table

Storage

Harmonics

-8.0 dBc Max.

Phase Noise

-130 dBc/Hz @ 1KHz

Part Number Guide

Sample Part Number: I583-5P8-26.000 Mhz

Package

Operating Temperature

FrequencyStability vs Temperature

Supply Voltage

Frequency

I583 (Clipped Sinewave TCXO)

I783 (Clipped Sinewave TCVCXO)

7 = 0

 C to +50 C

P =

2.0 ppm

3 = 3.3 V

- 26.000 MHz

1 = 0

 C to +70 C

Q =

2.5 ppm

7 = 3.0 V

3 = -20

 C to +70 C

R =

3.0 ppm

8 = 2.8 V

5 = -30

 C to +85 C

J =

5.0 ppm

2 = 2.7 V

1 = 1.8 V