IPZ65R019C7 datasheet(4/15 Pages) INFINEON

Part #	IPZ65R019C7

Description	650V CoolMOS??C7 Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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4 / 15 page

4

650VCoolMOS™C7PowerTransistor

IPZ65R019C7

Rev.2.0,2013-04-30

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

75

62

A

TC=25°C

TC=100°C

Pulsed drain current

2)

ID,pulse

-

496

A

TC=25°C

Avalanche energy, single pulse

EAS

-

583

mJ

ID=12.4A; VDD=50V

Avalanche energy, repetitive

EAR

-

2.92

mJ

ID=12.4A; VDD=50V

Avalanche current, single pulse

IAS

-

12.4

A

-

MOSFET dv/dt ruggedness

dv/dt

-

100

V/ns

VDS=0...400V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

Ptot

-

446

W

TC=25°C

Storage temperature

Tstg

-55

-

150

°C

-

Operating junction temperature

Tj

-55

-

150

°C

-

Mounting torque

-

60

Ncm

M3 and M3.5 screws

Continuous diode forward current

IS

-

75

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

496

A

TC=25°C

Reverse diode dv/dt

3)

dv/dt

-

1.5

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C

Maximum diode commutation speed

dif/dt

-

70

A/

µs VDS=0...400V,ISD<=IS,Tj=25°C

Insulation withstand voltage

VISO

-

n.a.

V

Vrms,TC=25°C,t=1min

1) Limited by Tj max.

2) Pulse width tp limited by Tj,max

3)IdenticallowsideandhighsideswitchwithidenticalRG

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