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FGD3N60UNDF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGD3N60UNDF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGD3N60UNDF Rev. C1 April 2013 Absolute Maximum Ratings Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC Collector Current @ TC = 25 oC 6 A Collector Current @ TC = 100 oC 3 A ICM (1) Pulsed Collector Current @ TC = 25 oC 9 A IF Diode Forward Current @ TC = 25 oC 3 A PD Maximum Power Dissipation @ TC = 25 oC 60 W Maximum Power Dissipation @ TC = 100 oC 24 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case 2.08 oC/W RθJC(Diode) Thermal Resistance, Junction to Case 5.0 oC/W RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 150 oC/W E Collector JEDEC TO-252 D-Pak Gate Emitter G E C FGD3N60UNDF 600 V, 3 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Using advanced NPT IGBT technology, Fairchild®’s the NPT IGBTs offer the optimum performance for low-power inverter- driven applications where low-losses and short-circuit rugged- ness features are essential. |
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