PJX8806_R1_00001 datasheet(1/6 Pages) PANJIT

Part #	PJX8806_R1_00001

Description	20V N-Channel Enhancement Mode MOSFET . ESD Protected

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Manufacturer	PANJIT [Pan Jit International Inc.]

Direct Link	http://www.panjit.com.tw

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PPJX8806

April 19,2013-REV.00

Page 1

20V N-Channel Enhancement Mode MOSFET – ESD Protected

Voltage

20 V

Current

800mA

SOT-563

Unit : inch(mm)

Features



RDS(ON), VGS@4.5V,IDS@500mA=0.4Ω



RDS(ON), VGS@2.5V,IDS@300mA=0.7Ω



RDS(ON), VGS@1.8V,IDS@100mA=1.2Ω(typ)



Advanced Trench Process Technology



Specially Designed for Load Switch or PWM application.



ESD Protected



Lead free in comply with EU RoHS 2011/65/EU directives.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-563 Package



Terminals : Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.00009 ounces, 0.0026 grams



Marking: X06

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

+12

V

Continuous Drain Current

ID

800

mA

Pulsed Drain Current

IDM

3000

mA

Power Dissipation

TA=25

oC

PD

350

mW

Derate above 25

oC

2.8

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

357

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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