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HY80N075T Datasheet(PDF) 1 Page - HY ELECTRONIC CORP.

Part No. HY80N075T
Description  75V / 80A N-Channel Enhancement Mode MOSFET
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Maker  HY [HY ELECTRONIC CORP.]
Homepage  http://www.hygroup.com.tw
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HY80N075T Datasheet(HTML) 1 Page - HY ELECTRONIC CORP.

   
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Features
• Low On-State Resistance
• Excellent Gate Charge x R
DS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for DC-DC Converter, Off-line UPS,
Automotive System, Solenoid and Motor Control
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING
PACKAGE
PACKING
HY80N075T
80N075T
TO-220AB
50PCS/TUBE
Absolute Maximum Ratings (T
C=25°C unless otherwise specified )
Symbol
Thermal Characteristics
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
VDS
Avalanche Energy with Single Pulse, L=0.3mH
125
0.83
380
-55 to +175
Parameter
Value
75
+20
80
320
TC=25℃
Maximum Power Dissipation
Derating Factor
VGS
ID
IDM
PD
EAS
Gate-Source Voltage
Pulsed Drain Current
1)
℃/W
RqJC
1.2
Units
TJ, TSTG
℃/W
62.5
Note : 1. Maximum DC current limited by the package
Symbol
Continuous Drain Current
Units
Parameter
Value
75V, RDS(ON)=8.0mW@VGS=10V, ID=40A
Drain-Source Voltage
Operating Junction and Storage Temperature Range
W
mJ
Junction-to-Ambient Thermal Resistance
RqJA
HY80N075T
V
V
A
A
Junction-to-Case Thermal Resistance
75V / 80A
N-Channel Enhancement Mode MOSFET
TC=25℃
TO-220AB
Drain
Gate
Source
1
2
3
2
3
1
REV.1, 5-May-2012
PAGE.1


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