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HY6N60T Datasheet(PDF) 4 Page - HY ELECTRONIC CORP.

Part # HY6N60T
Description  600V / 6.0A N-Channel Enhancement Mode MOSFET
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Manufacturer  HY [HY ELECTRONIC CORP.]
Direct Link  http://www.hygroup.com.tw
Logo HY - HY ELECTRONIC CORP.

HY6N60T Datasheet(HTML) 4 Page - HY ELECTRONIC CORP.

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HY6N60T / HY6N60FT
Typical Characteristics Curves ( T
C=25℃
℃
℃
℃, unless otherwise noted)
0.8
0.9
1
1.1
1.2
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (oC)
I
D = 250µA
10
100
V
GS = 0V
0.5
0.9
1.3
1.7
2.1
2.5
-50
-25
0
25
50
75
100
125
150
T
J - Junction Temperature (
oC)
V
GS =10 V
I
D =3.0A
Fig.7 On-Resistance
vs Junction Temperature
Fig.8 Breakdown Voltage
vs Junction Temperature
0.01
0.1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD - Source-to-Drain Voltage (V)
T
J = 125
oC
25oC
-55oC
Fig.9 Body Diode
Forward Voltage Characteristic
REV 1.0 : AUG. 2011
PAGE. 4


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