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MMSF7N03Z Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MMSF7N03Z
Description  SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF7N03Z Datasheet(HTML) 2 Page - Motorola, Inc

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MMSF7N03Z
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Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
35
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.03
0.15
2.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)
IGSS
1.3
5.0
µAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(1) (3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
2.0
5.5
3.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(1) (3)
(VGS = 10 Vdc, ID = 7.5 Adc)
(VGS = 4.5 Vdc, ID = 3.8 Adc)
RDS(on)
22
30
30
40
m
Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc)
(1)
gFS
4.0
9.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vdc V
0 Vdc
Ciss
750
1500
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
340
680
Transfer Capacitance
f = 1.0 MHz)
Crss
45
90
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
15 Vd
I
5 0 Ad
td(on)
40
80
ns
Rise Time
(VDS = 15 Vdc, ID = 5.0 Adc,
tr
90
180
Turn–Off Delay Time
( DS
, D
,
VGS = 10 Vdc, RG = 6 Ω) (1)
td(off)
470
940
Fall Time
tf
170
340
Turn–On Delay Time
(V
15 Vd
I
5 0 Ad
td(on)
120
240
ns
Rise Time
(VDD = 15 Vdc, ID = 5.0 Adc,
tr
350
700
Turn–Off Delay Time
( DD
, D
,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
td(off)
430
860
Fall Time
tf
140
280
Gate Charge
(V
24 Vd
I
5 0 Ad
QT
34
48
nC
(VDS = 24 Vdc, ID = 5.0 Adc,
Q1
3.5
( DS
, D
,
VGS = 10 Vdc) (1)
Q2
9.5
Q3
6.5
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 7.5 Adc, VGS = 0 Vdc) (1)
(IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.83
0.67
1.6
Vdc
Reverse Recovery Time
(I
7 5 Adc V
0 Vdc
trr
110
ns
(IS = 7.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
ta
22
dIS/dt = 100 A/µs) (1)
tb
90
Reverse Recovery Storage Charge
QRR
0.17
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA


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