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MMSF7N03Z Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MMSF7N03Z
Description  SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF7N03Z Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola TMOS Power MOSFET Transistor Device Data
Designer's™ Data Sheet
Medium Power Surface Mount Products
TMOS Single N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs
™ are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low RDS(on) amd true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Designed to withstand 200V Machine Model and 2000V Human Body Model
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 15
Vdc
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)
ID
ID
IDM
7.5
5.6
60
Adc
Apk
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)
PD
2.5
20
Watts
mW/
°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)
PD
1.6
12
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)
EAS
450
mJ
Thermal Resistance — Junction to Ambient (1)
— Junction to Ambient (2)
R
θJA
50
80
°C/W
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
S7N03Z
Device
Reel Size
Tape Width
Quantity
S7N03Z
MMSF7N03ZR2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the
Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF7N03Z/D
© Motorola, Inc. 1996
MMSF7N03Z
SINGLE TMOS
POWER MOSFET
7.5 AMPERES
30 VOLTS
RDS(on) = 0.030 OHM
CASE 751–05, Style 12
SO–8
Motorola Preferred Device
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
D
S
G


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