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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Single N-Channel with

Monolithic Zener ESD

Protected Gate

EZFETs

™ are an advanced series of power MOSFETs which utilize

Motorola’s High Cell Density TMOS process and contain monolithic

back–to–back zener diodes. These zener diodes provide protection

against ESD and unexpected transients. These miniature surface

mount MOSFETs feature ultra low RDS(on) amd true logic level

performance. They are capable of withstanding high energy in the

avalanche and commutation modes and the drain–to–source diode

has a very low reverse recovery time. EZFET devices are designed

for use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc–dc converters, and

power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Designed to withstand 200V Machine Model and 2000V Human Body Model

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 15

Vdc

Drain Current — Continuous @ TA = 25°C (1)

ID

ID

IDM

7.5

5.6

60

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

Linear Derating Factor (1)

PD

2.5

20

Watts

mW/

°C

Total Power Dissipation @ TA = 25°C (2)

Linear Derating Factor (2)

PD

1.6

12

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)

EAS

450

mJ

Thermal Resistance — Junction to Ambient (1)

— Junction to Ambient (2)

R

θJA

50

80

°C/W

(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)

(2) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ Steady State)

(3) Repetitive rating; pulse width limited by maximum junction temperature.

DEVICE MARKING

ORDERING INFORMATION

S7N03Z

Device

Reel Size

Tape Width

Quantity

S7N03Z

MMSF7N03ZR2

13

″

12 mm embossed tape

2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the

Bergquist Company.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMSF7N03Z/D

™

MMSF7N03Z

SINGLE TMOS

POWER MOSFET

7.5 AMPERES

30 VOLTS

RDS(on) = 0.030 OHM

CASE 751–05, Style 12

SO–8

Motorola Preferred Device

Source

Source

Source

Gate

1

2

3

4

8

7

6

5

Top View

Drain

Drain

Drain

Drain

D

S

G