XC7WH14 datasheet(5/18 Pages) PHILIPS

Part #	XC7WH14

Description	High-speed Si-gate CMOS device, three inverting buffers with Schmitt trigger action

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XC7WH14

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Product data sheet

Rev. 4 — 3 November 2011

5 of 18

NXP Semiconductors

XC7WH14

Triple inverting Schmitt trigger

11. Static characteristics

Table 7.

Static characteristics

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

25

C

40 C to +85 C 40 C to +125 C Unit

Min

Typ

Max

Min

Max

Min

Max

VOH

HIGH-level

output voltage

VI = VT+ or VT

IO = 50 A; VCC = 2.0 V

1.9

2.0

-

1.9

-

1.9

-

V

IO = 50 A; VCC = 3.0 V

2.9

3.0

-

2.9

-

2.9

-

V

IO = 50 A; VCC = 4.5 V

4.4

4.5

-

4.4

-

4.4

-

V

IO = 4.0 mA; VCC = 3.0 V

2.58

-

2.48

-

2.40

-

V

IO = 8.0 mA; VCC = 4.5 V

3.94

-

3.8

-

3.70

-

V

VOL

LOW-level

output voltage

VI = VT+ or VT

IO = 50 A; VCC = 2.0 V

-

0

0.1

-

0.1

-

0.1

V

IO = 50 A; VCC = 3.0 V

-

0

0.1

-

0.1

-

0.1

V

IO = 50 A; VCC = 4.5 V

-

0

0.1

-

0.1

-

0.1

V

IO = 4.0 mA; VCC = 3.0 V

-

0.36

-

0.44

-

0.55

V

IO = 8.0 mA; VCC = 4.5 V

-

0.36

-

0.44

-

0.55

V

II

input leakage

current

VI = 5.5 V or GND;

VCC =0 Vto 5.5 V

-

0.1

-

1.0

-

2.0

A

ICC

supply current VI =VCC or GND; IO = 0 A;

VCC = 5.5 V

-

1.0

-

10

-

40

A

CI

input

capacitance

-

1.5

10

-

10

-

10

pF

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