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MMSF5N02HD Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MMSF5N02HD
Description  SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF5N02HD Datasheet(HTML) 2 Page - Motorola, Inc

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MMSF5N02HD
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Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
41
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.02
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
0.0185
0.0219
0.025
0.040
Ohm
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
gFS
3.0
12
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1130
1582
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
464
650
Transfer Capacitance
f = 1.0 MHz)
Crss
117
235
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
15
30
ns
Rise Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
tr
93
185
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(off)
35
70
Fall Time
G = 6.0 Ω)
tf
40
80
Turn–On Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
9.0
Rise Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
53
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 Ω)
td(off)
56
Fall Time
G = 6.0 Ω)
tf
39
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)
QT
30.3
43
nC
See Figure 8
(VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)
Q1
3.0
(VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)
Q2
7.5
Q3
6.0
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.82
0.69
1.0
Vdc
Reverse Recovery Time
See Figure 15
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
32
ns
See Figure 15
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
24
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
8.0
Reverse Recovery Stored Charge
QRR
0.045
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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