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MMSF2P02E Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MMSF2P02E
Description  SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF2P02E Datasheet(HTML) 2 Page - Motorola, Inc

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MMSF2P02E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
24.7
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
2.0
4.7
3.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
0.19
0.3
0.25
0.4
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.8
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
340
475
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
220
300
Transfer Capacitance
f = 1.0 MHz)
Crss
75
150
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 Ω)
td(on)
20
40
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 Ω)
tr
40
80
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 6.0 Ω)
td(off)
53
106
Fall Time
G = 6.0 Ω)
tf
41
82
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
13
26
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
29
58
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 Ω)
td(off)
30
60
Fall Time
G = 6.0 Ω)
tf
28
56
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
10
15
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q1
1.1
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q2
3.3
Q3
2.5
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
1.5
2.0
Vdc
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
34
64
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
18
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
16
Reverse Recovery Stored Charge
QRR
0.035
µC
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.


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