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MMSF2P02E Datasheet(PDF) 5 Page - Motorola, Inc

Part No. MMSF2P02E
Description  SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF2P02E Datasheet(HTML) 5 Page - Motorola, Inc

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MMSF2P02E
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 11. Reverse Recovery Time (trr)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0
25
50
75
100
125
150
ID = 6 A
200
150
250
100
50
t, TIME
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
di/dt = 300 A/
µs
Standard Cell Density
High Cell Density
tb
trr
ta
trr
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
100
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided), 10s max.
1 ms
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy
rating must be derated for temperature as shown in the ac-
companying graph (Figure 13). Maximum energy at currents
below rated continuous ID can safely be assumed to equal
the values indicated.
Figure 14. Thermal Response
t, TIME (s)
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0022
0.0210
0.2587
0.7023
0.6863
108.44 F
3.1413 F
0.3517 F
0.0207 F
0.0020 F
Chip
Ambient
Normalized to
θja at 10s.


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