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2N6519 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. 2N6519
Description  PNP Epitaxial Silicon Transistor
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N6519 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. B2, Jnauary 2003
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
• Refer to 2N6520 for graphs
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-500
mA
IB
Base Current
-250
mA
PC
Collector Power Dissipation
625
W
Derate above 25
°C5
mW/
°C
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC= -100µA, IE=0
-300
V
BVCEO
* Collector-Emitter Breakdown Voltage
IC= -1mA, IB=0
-300
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
-5
V
ICBO
Collector Cut-off Current
VCB= -200V, IE=0
-50
nA
IEBO
Emitter Cut-off Current
VEB= -4V, IC=0
-50
nA
hFE
* DC Current Gain
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
30
45
45
40
20
270
200
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
-0.30
-0.35
-0.50
-1
V
V
V
V
VBE (sat)
Base-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
-0.75
-0.85
-0.90
V
V
V
VBE (on)
Base-Emitter On Voltage
VCE= -10V, IC= -100mA
-2
V
fT
* Current Gain Bandwidth Product
VCE= -20V, IC= -10mA, f=20MHz
40
200
MHz
Cob
Output Capacitance
VCB= -20V, IE=0, f=1MHz
6
pF
CEB
Emitter-Base Capacitance
VEB= -0.5V, IC=0, f=1MHz
100
pF
tON
Turn On Time
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
200
ns
tOFF
Turn Off Time
VCC= -100V, IC= -50mA
IB1=IB2=10mA
3.5
ns
2N6519
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -300V
• Collector Dissipation: PC (max)=625mW
1. Emitter 2. Base 3. Collector
TO-92
1


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