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2N5551 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. 2N5551
Description  NPN General Purpose Amplifier
Download  5 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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2N5551 Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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2N5551- MMBT5551 Rev. B
Electrical Characteristics T
a = 25°C unless otherwise noted
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 1.0mA, IB = 0
160
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
180
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10uA, IC = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 120V, IE = 0
VCB = 120V, IE = 0, Ta = 100°C
50
50
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
50
nA
On Characteristics
hFE
DC Current Gain
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
V
V
VBE(sat)
Base-Emitter On Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
1.0
V
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 10V,
f = 100MHz
100
300
MHz
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1.0MHz
6.0
pF
Cibo
Input Capacitance
VBE = 0.5V, IC = 0, f = 1.0MHz
20
pF
Hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V, f = 1.0kHz
50
250
NF
Noise Figure
IC = 250 uA, VCE = 5.0 V,
RS=1.0 k
Ω, f=10 Hz to 15.7 kHz
8.0
dB


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