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2N5551 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. 2N5551
Description  NPN General Purpose Amplifier
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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2N5551 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
2N5551- MMBT5551 Rev. B
tm
April 2006
2N5551- MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6"
× 1.6" × 0.06."
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
160
V
VCBO
Collector-Base Voltage
180
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector current - Continuous
600
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Max
Units
2N5551
*MMBT5551
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
Marking: 3S
2N5551
MMBT5551
TO-92


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