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2N5551 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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2N5551 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page ![]() 4 www.fairchildsemi.com 2N5551- MMBT5551 Rev. B Typical Performance Characteristics (Continued) Figure 7. Collector- Emitter Breakdown Voltage with Resistance Between Emitter-Base Figure 8. Small Signal Current Gain vs Collector Current Figure 9. Power Dissipation vs Ambient Temperature Between Emitter-Base 0.1 1 10 100 1000 160 180 200 220 240 260 RESISTANCE (k ) Ω I = 1.0 mA C vs Collector Current 110 50 0 4 8 12 16 I - COLLECTOR CURRENT (mA) C FREG = 20 MHz V = 10V CE 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 TEMPERATURE ( C) o TO-92 SOT-23 |