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2N5366 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N5366 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A1, July 2002 TO-92 1 Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 500 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCBO Collector-Base Breakdown Voltage IC = 10 µA40 V VCEO Collector-Emitter Breakdown Voltage IC = 10mA 40 V VEBO Emitter-Base Breakdown Voltage IC = 10 µA4.0 V ICBO Collector Cut-off Current VCB = 40V 100 nA ICES Collector Cut-off Current VCB = 40V 100 nA IEBO Emitter Cut-off Current VEB = 4.0V 10 µA hFE DC Current Gain VCE = 10V, IC = 2.0mA VCE = 1.0V, IC = 50mA VCE = 5.0V, IC = 300mA 80 100 40 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 2.5mA IC = 300mA, IB = 30mA 0.25 1.0 V VBE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 2.5mA IC = 300mA, IB = 30mA 1.1 2.0 VBE(on) Base-Emitter On Voltage VCE = 10V, IC = 2.0mA 0.5 0.8 V Cob Output Capacitance VCB = 10V, f = 1MHz 8.0 pF Cib Input Capacitance VCB = 0.5V, f = 1MHz 35 pF hfe Small-Signal Current Gain VCE = 10V, IC = 2.0mA, f = 1MHz 80 450 Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 200 °C/W 2N5366 PNP General Purpose Amplifier • This device is designed for general purpose amplifiers applications at collector currents to 300mA. • Sourced from process 68. 1. Emitter 2. Collector 3. Base |
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