2N5307 datasheet(2/2 Pages) FAIRCHILD

Part #	2N5307

Description	NPN Darlington Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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NPN Darlington Transistor

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC =10 mA, IB = 0

40

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 0.1

µA, I

E = 040V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 0.1

µA, I

C = 0

12

V

ICBO

Collector Cutoff Current

VCB = 40 V, IE = 0

VCB = 40 V, IE = 0, TA = 100

°C

0.1

20

µA

IEBO

Emitter Cutoff Current

VEB = 12 V, IC = 0

0.1

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE = 5.0 V, IC = 2.0 mA

VCE = 5.0 V, IC = 100 mA

2,000

6,000

20,000

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 200 mA, IB = 0.2 mA

1.4

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 200 mA, IB = 0.2 mA

1.6

V

VBE(on)

Base-Emitter On Voltage

IC = 200 mA, VCE = 5.0 V

1.5

V

SMALL SIGNAL CHARACTERISTICS

Ccb

Collector-Base Capacitance

VCB = 10 V, f = 1.0 MHz

10

pF

hfe

Small-Signal Current Gain

IC =2.0 mA, VCE = 5.0 V,

f = 1.0 kHz

IC =2.0 mA, VCE = 5.0 V,

f = 10 MHz

2,000

6.0

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

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