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2N5307 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2N5307 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page NPN Darlington Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC =10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 µA, I E = 040V V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 µA, I C = 0 12 V ICBO Collector Cutoff Current VCB = 40 V, IE = 0 VCB = 40 V, IE = 0, TA = 100 °C 0.1 20 µA µA IEBO Emitter Cutoff Current VEB = 12 V, IC = 0 0.1 µA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 100 mA 2,000 6,000 20,000 VCE(sat) Collector-Emitter Saturation Voltage IC = 200 mA, IB = 0.2 mA 1.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 200 mA, IB = 0.2 mA 1.6 V VBE(on) Base-Emitter On Voltage IC = 200 mA, VCE = 5.0 V 1.5 V SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz 10 pF hfe Small-Signal Current Gain IC =2.0 mA, VCE = 5.0 V, f = 1.0 kHz IC =2.0 mA, VCE = 5.0 V, f = 10 MHz 2,000 6.0 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
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