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2N3859A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2N3859A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, I C = 0 6.0 V ICBO Collector Cutoff Current VCB = 18 V, IE = 0 0.5 µA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 0.5 µA ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA 75 100 200 SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz 4 pF fT Current Gain - Bandwidth Product IC = 2.0 mA, VCE = 10 V 90 250 MHz rb’Cc Collector - Base Time Constant VCE = 10 V, IC = 2.0 mA, f = 31.9 MHz 150 pS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Similar Part No. - 2N3859A |
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Similar Description - 2N3859A |
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