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1N6266 Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # 1N6266
Description  GaAs INFRARED EMITTING DIODE
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

1N6266 Datasheet(HTML) 5 Page - Fairchild Semiconductor

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background image
d
CL
IRED Seating Plane
IRED
Area "A"
Receives
Power "Pw"
SPHERE
Centered on
IRED Axis
C and
Seating Plane
2
= A/d2 = 2 (I - COS
) Steradians
Ie = Pw/ mW/Steradians
H = Pw/A = Ie/d
2 mW/cm2
L
1N6266
GaAs INFRARED EMITTING DIODE
.001
.002
.004 .006
.01
1
2
1
3
1
4
1
5
1
7
1
10
1
15
1
20
1
60
1
45
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
.02
.04 .06.08 .1
.6 .8 1.0
Steradians -
Degrees -
Normalized to:
IF = 100 mA
= .01 Steradians
TA = 25˚C
= A
r2
2
= 2 (I - COS
)
r
Fig.8 Intensity and Power vs. Angle
le/
AREA A
TYPICAL CHARACTERISTICS
MATCHING A PHOTOTRANSISTOR WITH 1N6266
Assume a system requiring a 10 mA IL at an IRED to detector spacing of 2 cm (seating plane to seating plane), with
bias conditions at specification points.
Given: d1 = 2 cm, IL = 10 mA min.; Ie = 25 mW/Steradian
Then: H1 ≅ Ie/d12 = 25/(2)2 = 6.25 mW/cm2
Detector Evaluation:
IL MIN
@
H (GaAs)
S(GaAs)
TYPE
mA
mW/cm2
mA/mw/cm2
L14G1
1
0.5
2
L14G2
0.5
0.5
1
Calculated IL @ d1 is:
L14G1 (S) H1 = (2) 6.25 = 12.5 mA
L14G2 (S) H1 = (1) 6.25 = 6.25 mA
Since the system requires an IL of 10 mA minimum the correct device to use is the L14G1.
DS300278
3/12/01
5 OF 7
www.fairchildsemi.com
IRED RADIANT INTENSITY SPECIFICATION CONCEPT


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