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10BQ040M Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. 10BQ040M
Description  Schottky Rectifiler, 1.0 A
Download  6 Pages
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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10BQ040M Datasheet(HTML) 2 Page - Vishay Siliconix

   
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VS-10BQ040-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-May-12
2
Document Number: 93335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
See fig. 1
VFM (1)
1 A
TJ = 25 °C
0.45
V
2 A
0.52
1 A
TJ = 125 °C
0.38
2 A
0.50
Maximum reverse leakage current
See fig. 2
IRM
TJ = 25 °C
VR = Rated VR
0.1
mA
TJ = 125 °C
9.0
Typical junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
115
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
Maximum voltage rate of charge
dV/dt
Rated VR
10 000
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
36
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
80
Approximate weight
0.10
g
0.003
oz.
Marking device
Case style SMB (similar DO-214AA)
1F
dP
tot
dT
J
-------------
1
R
thJA
--------------
<


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