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MMDFS2P102 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MMDFS2P102
Description  P-Channel Power MOSFET with Schottky Rectifier 20 Volts
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMDFS2P102 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola TMOS Product Preview Data
Designer's™ Data Sheet
FETKY™
MOSFET and Schottky Rectifier
The FETKY
™ product family incorporates low RDS(on), true logic level MOSFETs
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers
to offer high efficiency components in a space saving configuration. Independent pinouts
for TMOS and Schottky die allow the flexibility to use a single component for switching
and rectification functions in a wide variety of applications such as Buck Converter,
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-
ment in Battery Packs, Chargers, Cell Phones and other Portable Products.
HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
Logic Level Gate Drive — Can be Driven by Logic ICs
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MW)
VDGR
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
"20
Vdc
Drain Current (3) — Continuous @ TA = 25°C
— Continuous @ TA = 100°C
— Single Pulse (tp
v 10 ms)
ID
ID
IDM
3.3
2.1
20
Adc
Apk
Total Power Dissipation @ TA = 25°C (2)
PD
2.0
Watts
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W
EAS
324
mJ
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
20
Volts
Average Forward Current (3) (Rated VR) TA = 100°C
IO
1.0
Amps
Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105°C
Ifrm
2.0
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
20
Amps
DEVICE MARKING
ORDERING INFORMATION
2P102
Device
Reel Size
Tape Width
Quantity
2P102
MMDFS2P102R2
13
12 mm embossed tape
2500 units
(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤ 250 µs, Duty Cycle ≤ 2.0%.
(3) Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.
Order this document
by MMDFS2P102/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMDFS2P102
P–Channel Power MOSFET
with Schottky Rectifier
20 Volts
RDS(on) = 0.16 W
VF = 0.39 Volts
CASE 751–05, Style 18
(SO– 8)
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TOP VIEW
© Motorola, Inc. 1997


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