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ATTL7583BAJ-DT Datasheet(PDF) 6 Page - Agere Systems |
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ATTL7583BAJ-DT Datasheet(HTML) 6 Page - Agere Systems |
6 / 20 page 6 Lucent Technologies Inc. Data Sheet February 2001 L7583A/B/C/D Line Card Access Switch Electrical Characteristics (continued) Table 7. Ring Test Return Switch, 5 * Applied voltage is 100 Vp-p square wave at 100 Hz. Table 8. Ringing Test Switch, 6 * Choice of secondary protector and series current-limit resistor should ensure these ratings are not exceeded. † Applied voltage is 100 Vp-p square wave at 100 Hz. Parameter Test Condition Measure Min Typ Max Unit OFF-state Leakage Current: +25 °C +85 °C –40 °C Vswitch (differential) = –320 V to Gnd Vswitch (differential) = –60 V to +260 V Vswitch (differential) = –330 V to Gnd Vswitch (differential) = –60 V to +270 V Vswitch (differential) = –310 V to Gnd Vswitch (differential) = –60 V to +250 V Iswitch Iswitch Iswitch — — — — — — 1 1 1 µA µA µA ON-resistance Iswitch (on) = ±0 mA, ±10 mA ∆ VON —50 100 Ω Isolation: +25 °C +85 °C –40 °C Vswitch (both poles) = ±320 V, Logic inputs = Gnd Vswitch (both poles) = ±330 V, Logic inputs = Gnd Vswitch (both poles) = ±310 V, Logic inputs = Gnd Iswitch Iswitch Iswitch — — — — — — 1 1 1 µA µA µA dV/dt Sensitivity* —— — 200 — V/µs Parameter Test Condition Measure Min Typ Max Unit OFF-state Leakage Current: +25 °C +85 °C –40 °C Vswitch (differential) = –60 V to +190 V Vswitch (differential) = +60 V to –190 V Vswitch (differential) = –60 V to +200 V Vswitch (differential) = +60 V to –200 V Vswitch (differential) = –60 V to +180 V Vswitch (differential) = +60 V to –180 V Iswitch Iswitch Iswitch — — — — — — 1 1 1 µA µA µA ON-resistance Iswitch (on) = ±70 mA, ±80 mA ∆ VON —— 20 Ω ON Voltage Iswitch (on) = ±1 mA — — — 1.5 V Steady-state Current* — — — — 100 mA Release Current — — — 500 — µA Isolation: +25 °C +85 °C –40 °C Vswitch (both poles) = ±320 V, Logic inputs = Gnd Vswitch (both poles) = ±330 V, Logic inputs = Gnd Vswitch (both poles) = ±310 V, Logic inputs = Gnd Iswitch Iswitch Iswitch — — — — — — 1 1 1 µA µA µA dV/dt Sensitivity† —— — 200 — V/µs |
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