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MMDF5N02Z Datasheet(PDF) 1 Page - Motorola, Inc |
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MMDF5N02Z Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 10 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet Medium Power Surface Mount Products TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs ™ are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process and contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. • Zener Protected Gates Provide Electrostatic Discharge Protection • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 20 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 12 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 5.0 4.5 40 Adc Apk Total Power Dissipation @ TA = 25°C (1) PD 2.0 Watts Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction to Ambient R θJA 62.5 °C/W Maximum Temperature for Soldering TL 260 °C (1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds) DEVICE MARKING ORDERING INFORMATION D5N02Z Device Reel Size Tape Width Quantity D5N02Z MMDF5N02ZR2 13 ″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade- mark of the Bergquist Company. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF5N02Z/D © Motorola, Inc. 1997 ™ MMDF5N02Z DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM CASE 751–05, Style 11 SO–8 Motorola Preferred Device Source1 Gate1 Source2 Gate2 1 2 3 4 8 7 6 5 Top View Drain1 Drain1 Drain2 Drain2 D S G REV 1 |
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