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SFT825N-S Datasheet(PDF) 5 Page - Seoul Semiconductor |
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SFT825N-S Datasheet(HTML) 5 Page - Seoul Semiconductor |
5 / 18 page Document No. : SSC-QP-7-07-24 (Rev.00) Rev. 07 Rev. 07 June 2009 June 2009 www. www.acriche acriche.com .com 3. Electric & Optical characteristics *1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10% *2 Please refer to CIE 1931 chromaticity diagram *3 2 ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. [Note] All measurements were made under the standardized environment of SSC. lm/W - 41 - I F =20mA (per chip) ηop Red Optical Efficiency - 44 - Green - 15 - Blue lm - 1.7 - I F =20mA (per chip) ΦV Red Luminance Flux - 2.8 - Green - 0.93 - Blue nm - 632 - I F =20mA λ P Red Peak Wavelength K/W - 278 - I F =20mA Rthja Red Thermal Resistance (one chip on) - 277 - I F =20mA Green - 220 - I F =20mA Blue deg. - 120 - I F =20mA (per die) 2θ½ R, G, B Viewing Angle *3 - 23 - I F =20mA Blue - 33 - I F =20mA Green nm - 14 - I F =20mA ∆λ Red Spectral Bandwidth 465 460 455 I F =20mA Blue 535 527 520 I F =20mA Green nm 625 623 620 I F =20mA λ d Red Dominant Wavelength - 453 - I F =20mA Blue - 518 - I F =20mA Green 560 400 - Blue 1600 1200 - Green mcd 1100 700 - I F =20mA (per chip) IV Red Luminance Intensity *1 1 - - Blue 1 - - Green µA 1 - - V R=10V (per die) IR Red Reverse Current 3.6 3.2 3.0 I F =20mA Blue 3.8 3.2 3.0 I F =20mA Green V 2.3 2.1 1.8 I F =20mA VF Red Forward Voltage Unit Max Typ Min Condition Symbol Parameter (Ta=25ºC) |
Similar Part No. - SFT825N-S_09 |
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Similar Description - SFT825N-S_09 |
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