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SFT825N-S Datasheet(PDF) 5 Page - Seoul Semiconductor

Part # SFT825N-S
Description  Pb-free Reflow Soldering application RoHS Compliant
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Manufacturer  SEOUL [Seoul Semiconductor]
Direct Link  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

SFT825N-S Datasheet(HTML) 5 Page - Seoul Semiconductor

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Document No. : SSC-QP-7-07-24 (Rev.00)
Rev. 07
Rev. 07
June 2009
June 2009
www.
www.acriche
acriche.com
.com
3. Electric & Optical characteristics
*1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%
*2 Please refer to CIE 1931 chromaticity diagram
*3 2 ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
lm/W
-
41
-
I
F =20mA
(per chip)
ηop
Red
Optical Efficiency
-
44
-
Green
-
15
-
Blue
lm
-
1.7
-
I
F =20mA
(per chip)
ΦV
Red
Luminance Flux
-
2.8
-
Green
-
0.93
-
Blue
nm
-
632
-
I
F =20mA
λ
P
Red
Peak Wavelength
K/W
-
278
-
I
F =20mA
Rthja
Red
Thermal Resistance
(one chip on)
-
277
-
I
F =20mA
Green
-
220
-
I
F =20mA
Blue
deg.
-
120
-
I
F =20mA
(per die)
½
R, G, B
Viewing Angle *3
-
23
-
I
F =20mA
Blue
-
33
-
I
F =20mA
Green
nm
-
14
-
I
F =20mA
∆λ
Red
Spectral Bandwidth
465
460
455
I
F =20mA
Blue
535
527
520
I
F =20mA
Green
nm
625
623
620
I
F =20mA
λ
d
Red
Dominant
Wavelength
-
453
-
I
F =20mA
Blue
-
518
-
I
F =20mA
Green
560
400
-
Blue
1600
1200
-
Green
mcd
1100
700
-
I
F =20mA
(per chip)
IV
Red
Luminance
Intensity *1
1
-
-
Blue
1
-
-
Green
µA
1
-
-
V
R=10V
(per die)
IR
Red
Reverse Current
3.6
3.2
3.0
I
F =20mA
Blue
3.8
3.2
3.0
I
F =20mA
Green
V
2.3
2.1
1.8
I
F =20mA
VF
Red
Forward Voltage
Unit
Max
Typ
Min
Condition
Symbol
Parameter
(Ta=25ºC)


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