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MMDF3N06HD Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MMDF3N06HD
Description  DUAL TMOS POWER MOSFET 60 VOLTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MMDF3N06HD Datasheet(HTML) 1 Page - Motorola, Inc

 
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Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
ID
IDM
3.3
16.5
Adc
Apk
Source Current — Continuous @ TA = 25°C
IS
1.7
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 Ω)
EAS
105
mJ
Thermal Resistance — Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF3N06HDR2
13
12 mm embossed tape
2500 units
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N06HD/D
© Motorola, Inc. 1997
MMDF3N06HD
DUAL TMOS
POWER MOSFET
60 VOLTS
RDS(on) = 100 mW
CASE 751–05, Style 11
SO–8
D
S
G
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
Motorola Preferred Device
D
S
G
Preferred devices are Motorola recommended choices for future use and best overall value.


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