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PMEG6030EVP Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMEG6030EVP Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page NXP Semiconductors PMEG6030EVP High-temperature 60 V, 3 A Schottky barrier rectifier PMEG6030EVP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 4 March 2013 5 / 13 Symbol Parameter Conditions Min Typ Max Unit IF = 1.5 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C; pulsed - 375 - mV IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C; pulsed - 390 440 mV IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C; pulsed - 420 475 mV VR = 5 V; Tj = 25 °C; pulsed - 7 20 µA VR = 10 V; Tj = 25 °C; pulsed - 9 40 µA VR = 30 V; Tj = 25 °C; pulsed - 20 80 µA VR = 60 V; Tj = 25 °C; pulsed - 115 400 µA VR = 10 V; Tj = 125 °C; pulsed - 9 - mA IR reverse current VR = 60 V; Tj = 125 °C; pulsed - 70 300 mA VR = 1 V; f = 1 MHz; Tj = 25 °C - 575 - pF Cd diode capacitance VR = 10 V; f = 1 MHz; Tj = 25 °C - 200 - pF trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C - 20 - ns VFRM peak forward recovery voltage IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C - 385 - mV aaa-006602 VF (V) 0 0.6 0.4 0.2 10-2 10-3 1 10-1 10 IF (A) 10-4 (1) (2) (3) (4) (5) (6) (1) Tj = 175 °C (2) Tj = 150 °C (3) Tj = 125 °C (4) Tj = 85 °C (5) Tj = 25 °C (6) Tj = −40 °C Fig. 4. Forward current as a function of forward voltage; typical values aaa-006603 1 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 IR (A) 10-9 VR (V) 0 60 40 20 (1) (2) (3) (4) (5) (6) (1) Tj = 175 °C (2) Tj = 150 °C (3) Tj = 125 °C (4) Tj = 85 °C (5) Tj = 25 °C (6) Tj = −40 °C Fig. 5. Reverse current as a function of reverse voltage; typical values |
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