Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

MMDF3N04HD Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MMDF3N04HD
Description  DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS
Download  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
Logo 

MMDF3N04HD Datasheet(HTML) 2 Page - Motorola, Inc

 
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
MMDF3N04HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
40
4.3
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.015
0.15
2.5
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
0.013
500
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
2.0
4.9
3.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(1) (3)
(VGS = 10 Vdc, ID = 3.4 Adc)
(VGS = 4.5 Vdc, ID = 1.7 Adc)
RDS(on)
55
79
80
100
m
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)
(1)
gFS
2.0
4.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
450
900
pF
Output Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
130
230
Transfer Capacitance
f = 1.0 MHz)
Crss
32
96
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 Ω) (1)
td(on)
9.0
18
ns
Rise Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 Ω) (1)
tr
15
30
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 Ω) (1)
td(off)
28
56
Fall Time
tf
19
38
Turn–On Delay Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
td(on)
13
26
ns
Rise Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
tr
77
144
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
td(off)
17
34
Fall Time
tf
20
40
Gate Charge
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
QT
13.9
28
nC
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
Q1
2.1
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
Q2
3.7
Q3
5.4
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.4 Adc, VGS = 0 Vdc) (1)
(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.87
0.8
1.5
Vdc
Reverse Recovery Time
(IS = 3.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
trr
27
ns
(IS = 3.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
ta
20
dIS/dt = 100 A/µs) (1)
tb
7.0
Reverse Recovery Storage Charge
QRR
0.03
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.


Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn