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MMDF3207 Datasheet(PDF) 3 Page - Motorola, Inc

Part No. MMDF3207
Description  DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MMDF3207 Datasheet(HTML) 3 Page - Motorola, Inc

   
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MMDF3207
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Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage(1)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
TBD
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)
IDSS
1.0
5.0
µAdc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage(1)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
TBD
Vdc
mV/
°C
Static Drain–to–Source On–Resistance(1)
(VGS = 4.5 Vdc, ID = 7.8 Adc)
(VGS = 2.5 Vdc, ID = 6.2 Adc)
RDS(on)
TBD
TBD
33
50
m
Forward Transconductance (VDS = 10 Vdc, ID = 7.8 Adc)(1)
gFS
TBD
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 Vdc V
0 V
Ciss
TBD
TBD
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
TBD
TBD
Transfer Capacitance
f = 1.0 MHz)
Crss
TBD
TBD
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
1 0 Ad
td(on)
TBD
TBD
ns
Rise Time
(VDS = 10 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
TBD
TBD
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 Ω)(1)
td(off)
TBD
TBD
Fall Time
G
)
tf
TBD
TBD
Turn–On Delay Time
(V
10 Vd
I
1 0 Ad
td(on)
TBD
TBD
Rise Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS =4 5Vdc
tr
TBD
TBD
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)(1)
td(off)
TBD
TBD
Fall Time
G
)
tf
TBD
TBD
Gate Charge
(V
10 Vd
I
7 8 Ad
QT
TBD
TBD
nC
(VDS = 10 Vdc, ID = 7.8 Adc,
(1)
Q1
TBD
( DS
, D
,
VGS = 4.5 Vdc)(1)
Q2
TBD
Q3
TBD
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)(1)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
TBD
TBD
1.2
Vdc
Reverse Recovery Time
(I
1 7 Ad
V
0 Vd
trr
TBD
ns
(IS = 1.7 Adc, VGS = 0 Vdc,
(1)
ta
TBD
( S
,
GS
,
dIS/dt = 100 A/µs)(1)
tb
TBD
Reverse Recovery Stored Charge
QRR
TBD
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Repetitive rating; pulse width limited by max. junction temperature.


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