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APT40M42JN Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT40M42JN Datasheet(HTML) 1 Page - Advanced Power Technology |
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APT40M42JN 400V 86A 0.042 Ω SINGLE DIE ISOTOP® PACKAGE Symbol V DSS I D I DM , l LM V GS P D T J ,T STG T L Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (V GS = 0V, I D = 250 µA) On State Drain Current 2 (V DS > I D (ON) x R DS (ON) Max, V GS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 0.5 I D [Cont.]) Zero Gate Voltage Drain Current (V DS = V DSS , V GS = 0V) Zero Gate Voltage Drain Current (V DS = 0.8 V DSS , V GS = 0V, T C = 125 °C) Gate-Source Leakage Current (V GS = ±30V, V DS = 0V) Gate Threshold Voltage (V DS = V GS , I D = 5.0mA) THERMAL CHARACTERISTICS Symbol RΘJC RΘCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX 0.18 0.05 UNIT °C/W Symbol BV DSS I D (ON) R DS (ON) I DSS I GSS V GS (TH) MIN TYP MAX APT40M42JN 400 APT40M42JN 86 APT40M42JN 0.042 250 1000 ±100 24 UNIT Volts Amps Ohms µA nA Volts UNIT Volts Amps Volts Watts W/ °C °C APT 40M42JN 400 86 344 ±30 690 5.52 -55 to 150 300 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. SOT-227 G S S D ISOTOP® "UL Recognized" File No. E145592 (S) N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 G D S |
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