FEATURES

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Weight: 0.004 ounces, 0.13 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

Reverse voltage

V

Peak reverse voltage

V

Average forw ard rectified current

half w ave rectification w ith resist.load

and f

50Hz

Forw ard surge current @ t<1s and T

A

Pow er dissipation

@ T

mW

Junction temperature

Storage temperature range

ELECTRICAL CHARACTERISTICS

UNITS

Forw ard voltage at I

V

Leakage current

@ V

μA

Capacitance

pF

Reverse recovery time

1S2076A

0.1

ns

1S2076A

MECHANICAL DATA

SMALL SIGNAL SWITCHING DIODE

Case: DO-35, glass case

REVERSE VOLTAGE : 60 V

CURRENT:

0.15 A

Polarity: Color band denotes cathode

1.0

25

mA

-

-

0.8

-

60

70

150

175

-55 --- +175

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

MIN

TYP

MAX

-

3.0

8.0

SEMICONDUCTOR

t

rr

-

-

-

-

KI

Document Number 0268032

1.

DO-35(GLASS)