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1S2076A Datasheet(PDF) 1 Page - Kwang Myoung I.S. CO.,LTD |
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1S2076A Datasheet(HTML) 1 Page - Kwang Myoung I.S. CO.,LTD |
1 / 3 page FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. MAXIMUM RATINGS UNITS Reverse voltage VR V Peak reverse voltage VRM V Average forw ard rectified current half w ave rectification w ith resist.load @TA=25 and f 50Hz Forw ard surge current @ t<1s and T J=25 IFSM A Pow er dissipation @ T A=25 Ptot mW Junction temperature TJ Storage temperature range TSTG ELECTRICAL CHARACTERISTICS UNITS Forw ard voltage at I F=10mA VF V Leakage current @ V R=30V IR μA Capacitance @ VF=VR=1V,f=1MHz CJ pF Reverse recovery time from IF=IR=10mA to Irr=1mA 1S2076A 0.1 ns 1S2076A MECHANICAL DATA SMALL SIGNAL SWITCHING DIODE Case: DO-35, glass case REVERSE VOLTAGE : 60 V CURRENT: 0.15 A Polarity: Color band denotes cathode IAV 1.0 25 01) mA - - 0.8 - 60 70 150 175 -55 --- +175 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. MIN TYP MAX - 3.0 8.0 SEMICONDUCTOR t rr - - - - KI KI SEMICONDUCTOR Document Number 0268032 1. DO-35(GLASS) |
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