DYNAMIC CHARACTERISTICS

APT1004RCN

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Test Conditions

f = 1 MHz

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

R

G

= 1.8

Ω

Characteristic

Drain-to-Case Capacitance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

MIN

TYP

MAX

15

22

805

950

115

160

37

60

35

55

4.3

7

18

27

10

20

12

24

33

50

16

32

UNIT

pF

nC

ns

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380

µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

Symbol

Characteristic

Junction to Case

Junction to Ambient

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

3.6

14.4

1.3

290

580

1.65

3.3

UNIT

W/

°C

MIN

TYP

MAX

1.00

50

THERMAL CHARACTERISTICS

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0

0.5

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01