MMBR911 datasheet(3/6 Pages) MOTOROLA

Part #	MMBR911

Description	NPN Silicon High-Frequency Transistor

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Manufacturer	MOTOROLA [Motorola, Inc]

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MMBR911LT1

MOTOROLA RF DEVICE DATA

Figure 2. Input Capacitance versus

Base–Emitter Voltage

2.5

0

VBE, BASE–EMITTER VOLTAGE (Vdc)

2

1.5

1

0.5

0

12

3

Cib

f = 1 MHz

Vcb, COLLECTOR–BASE VOLTAGE (Vdc)

2.5

0

2

1.5

1

0.5

0

12

3

4

56

7

8

9

10

Cob

Ccb

f = 1 MHz

0

IC, COLLECTOR CURRENT (mA)

20

16

12

8

4

0

10

20

30

f = 500 MHz

VCE = 10 V

Figure 3. Output Capacitances versus

Collector–Base Voltage

Figure 4. Gain at Noise Figure versus

Collector Current

1 GHz

Figure 5. Noise Figure versus Collector Current

0

IC, COLLECTOR CURRENT (mA)

5

4

3

2

0

10

20

30

VCE = 10 V

f = 1 GHz

500 MHz

0.2

f, FREQUENCY (GHz)

25

20

15

10

5

0

0.3

0.5

1

1.5

2

5

4

3

2

1

0

VCE = 10 V

IC = 10 mA

GNF

NF

25

0.2

f, FREQUENCY (GHz)

20

15

10

5

0.3

0.5

1

2

30

1.5

VCE = 10 V

IC = 30 mA

GUMAX

|S21|2

Figure 6. Gain at Noise Figure and Noise

Figure versus Frequency

Figure 7. Maximum Unilateral Gain and

Insertion Gain versus Frequency

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