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DRD3770A50 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # DRD3770A50
Description  Rectifier Diode
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DRD3770A50 Datasheet(HTML) 3 Page - Dynex Semiconductor

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- 3 -
SEMICONDUCTOR
DRD3770A52
3/8
www.dynexsemi.com
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
IFSM
Surge (non-repetitive) on-state current
10ms half sine, Tcase = 150°C
56
kA
I
2t
I
2t for fusing
VR = 50% VRRM - ¼ sine
15.8
MA
2s
IFSM
Surge (non-repetitive) on-state current
10ms half sine, Tcase = 150°C
70
kA
I
2t
I
2t for fusing
VR = 0
24.5
MA
2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Rth(j-c)
Thermal resistance
– junction to case
Double side cooled
DC
-
0.0065
°C/W
Single side cooled
Anode DC
-
0.013
°C/W
Cathode DC
-
0.013
°C/W
Rth(c-h)
Thermal resistance
– case to heatsink
Clamping force 83.0kN
Double side
-
0.001
°C/W
(with mounting compound)
Single side
-
0.002
°C/W
Tvj
Virtual junction temperature
On-state (conducting)
-
160
°C
Reverse (blocking)
-
150
°C
Tstg
Storage temperature range
-55
150
°C
Fm
Clamping force
75.0
91.0
kN
CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VFM
Forward voltage
At 3000A peak, Tcase = 25°C
-
1.17
V
IRM
Peak reverse current
At VDRM, Tcase = 150°C
-
200
mA
VTO
Threshold voltage
At Tvj = 150°C
-
0.82
V
rT
Slope resistance
At Tvj = 150°C
-
0.111
m


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