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STH260N6F6-2 Datasheet(PDF) 5 Page - STMicroelectronics

Part No. STH260N6F6-2
Description  N-channel 60 V, 1.7 typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STH260N6F6-2 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STH260N6F6-2
Electrical characteristics
Doc ID 018784 Rev 4
5/14
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
180
A
ISDM
(1)
1.
Current limited by package.
Source-drain current (pulsed)
720
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 180 A, VGS = 0
1.1
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VDD = 48 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
55.6
116
3.8
ns
nC
A


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