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STH260N6F6-2 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STH260N6F6-2
Description  N-channel 60 V, 1.7 typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STH260N6F6-2 Datasheet(HTML) 4 Page - STMicroelectronics

 
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Electrical characteristics
STH260N6F6-2
4/14
Doc ID 018784 Rev 4
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0)
ID = 250 µA
60
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = 60 V
1
µA
VDS = 60 V, TC=125 °C
100
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 60 A
1.7
2.4
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
11800
pF
Coss
Output capacitance
-
1235-
pF
Crss
Reverse transfer
capacitance
488
pF
Qg
Total gate charge
VDD = 30 V, ID = 120 A,
VGS = 10 V
(see Figure 14)
183
nC
Qgs
Gate-source charge
-
53
-nC
Qgd
Gate-drain charge
41
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 30 V, ID = 60 A
RG =4.7 Ω VGS = 10 V
(see Figure 13)
-
31.4
165
-
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
-
144.4
62.6
-
ns
ns


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