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DIM600DDM17-A000 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DIM600DDM17-A000 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 8 page DIM600DDM17-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 20 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 4 μA VGE(TH) Gate threshold voltage IC = 30mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) † Collector-emitter saturation voltage VGE = 15V, IC = 600A 2.7 3.2 V VGE = 15V, IC = 600A, Tj = 125°C 3.4 4.0 V IF Diode forward current DC 600 A IFM Diode maximum forward current tp = 1ms 1200 A VF † Diode forward voltage IF = 600A 2.0 2.3 V IF = 600A, Tj = 125°C 2.1 2.4 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 45 nF Qg Gate charge ±15V 6.8 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz nF LM Module inductance – per switch 3.8 nH RINT Internal transistor resistance – per switch 270 μ SCData Short circuit current, ISC Tj = 125°C, VCC = 1000V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L * x dI/dt IEC 60747-9 2400 A Note: † Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + L M |
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