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DGT409BCA6565 Datasheet(PDF) 9 Page - Dynex Semiconductor |
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DGT409BCA6565 Datasheet(HTML) 9 Page - Dynex Semiconductor |
9 / 11 page SEMICONDUCTOR DGT409BCA 9/11 www.dynexsemi.com 0 2 4 6 8 12 10 14 16 18 20 22 24 26 28 30 0 10 20 30 40 50 60 70 80 Rate of rise of reverse gate current, dI GQ/dt - (A/µs) 0 1.0 0.8 0.6 0.4 0.2 2.0 1.8 1.6 1.4 1.2 3.0 2.8 2.6 2.4 2.2 Conditions: T j = 115° C, CS = 2µF, R S = 10, IT = 800A, V DM = 3000V t gs t gf 0.0001 0.001 0.01 0.1 0.001 0.01 1 0.1 10 100 Time - (s) dc Fig.18 Gate storage time and fall time vs rate of rise of reverse gate current Fig.19 Maximum (limit) transient thermal impedance – double side cooled |
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