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MAT03 Datasheet(PDF) 2 Page - Analog Devices |
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MAT03 Datasheet(HTML) 2 Page - Analog Devices |
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2 / 12 page  MAT03A MAT03E MAT03F Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Units Current Gain 1 hFE VCB = 0 V, –36 V IC = 1 mA 100 165 100 165 80 165 IC = 100 µA 90 150 90 150 70 150 IC = 10 µA 80 120 80 120 60 120 Current Gain Matching 2 DhFE IC = 100 µA,VCB = 0 V 0.5 3 0.5 3 0.5 6 % Offset Voltage 3 VOS VCB = 0 V, IC = 100 µA 40 100 40 100 40 200 µV Offset Voltage Change DVOS/DVCB IC = 100 µA vs. Collector Voltage VCB1 = 0 V 11 150 11 150 11 200 µV VCB2 = –36 V 11 150 11 150 11 200 µV Offset Voltage Change DVOS/DIC VCB = 0 V 12 50 12 50 12 75 µV vs. Collector Current IC1 = 10 µA, IC2 = 1 mA 12 50 12 50 12 75 µV Bulk Resistance rBE VCB = 0 V 0.3 0.75 0.3 0.75 0.3 0.75 Ω 10 µA ≤ I C ≤ 1 mA 0.3 0.75 0.3 0.75 0.3 0.75 Ω Offset Current IOS IC = 100 µA, VCB = 0 V 6 35 6 35 6 45 nA Collector-Base Leakage Current ICB0 VCB = –36 V = VMAX 50 200 50 200 50 400 pA Noise Voltage Density 4 eN IC = 1 mA, VCB = 0 fO = 10 Hz 0.8 2 0.8 0.8 nV/ ÷Hz fO = 100 Hz 0.7 1 0.7 0.7 nV/ ÷Hz fO = 1 kHz 0.7 1 0.7 0.7 nV/ ÷Hz fO = 10 kHz 0.7 1 0.7 0.7 nV/ ÷Hz Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 µA 0.025 0.1 0.025 0.1 0.025 0.1 V –2– REV. B NOTES 1Current gain is measured at collector-base voltages (V CB) swept from 0 to VMAX at indicated collector current. Typicals are measured at V CB = 0 V. 2 Current gain matching ( ∆h FE) is defined as: ∆h FE = 100 ( ∆I B ) hFE ( min ) I C . 3Offset voltage is defined as: VOS = VBE1 – VBE2, where VOS is the differential voltage for IC1 = IC2: VOS = VBE1 – VBE2 = KT q In I C1 I C2 . 4Sample tested. Noise tested and specified as equivalent input voltage for each transistor. 5Guaranteed by V OS test (TCVOS = VOS/T for VOS VBE) where T = 298°K for TA = 25°C. Specifications subject to change without notice. MAT03–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ T A = +25 C, unless otherwise noted.) ELECTRICAL CHARACTERISTICS MAT03A Parameter Symbol Conditions Min Typ Max Units Current Gain hFE VCB = 0 V, –36 V IC = 1 mA 70 110 IC = 100 µA 60 100 IC = 10 µA50 85 Offset Voltage VOS IC = 100 µA, VCB = 0 V 40 150 µV Offset Voltage Drift 5 TCVOS IC = 100 µA, VCB = 0 V 0.3 0.5 µV/°C Offset Current IOS IC = 100 µA, VCB = 0 V 15 85 nA Breakdown Voltage BVCEO 36 54 V (at –55 C ≤ T A ≤ +125 C, unless otherwise noted.) ELECTRICAL CHARACTERISTICS MAT03E MAT03F Parameter Symbol Conditions Min Typ Max Min Typ Max Units Current Gain hFE VCB = 0 V, –36 V IC = 1 mA 70 120 60 120 IC = 100 µA 60 105 50 105 IC = 10 µA 5090 4090 Offset Voltage VOS IC = 100 µA, V CB = 0 V 30 135 30 265 µV Offset Voltage Drift 5 TCVOS IC = 100 µA, V CB = 0 V 0.3 0.5 0.3 1.0 µV/°C Offset Current IOS IC = 100 µA, VCB = 0 V 10 85 10 200 nA Breakdown Voltage BVCEO 36 36 V (at –40 C ≤ T A ≤ +85 C, unless otherwise noted.) |
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