SI7655DN datasheet(5/8 Pages) VISHAY

Part #	SI7655DN

Description	P-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si7655DN

Document Number: 63617

S12-2393-Rev. B, 15-Oct-12

www.vishay.com

5

Vishay Siliconix

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

20

40

60

80

100

120

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

10

20

30

40

50

60

70

025

50

75

100

125

150

T

C - Case Temperature (°C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

Square Wave Pulse Duration (s)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

t1

t2

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 63 °C/W

3. TJM -TA =PDMZthJA(t)

t1

t2

4. Surface Mounted

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