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TPS5402DR Datasheet(PDF) 4 Page - Texas Instruments

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Part # TPS5402DR
Description  3.5-V TO 28-V INPUT VOLTAGE, 1.7-A OUTPUT CURRENT, NON-SYNCHRONOUS STEP-DOWN REGULATOR WITH INTEGRATED MOSFET
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS5402DR Datasheet(HTML) 4 Page - Texas Instruments

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TPS5402
SLVSBK4 – SEPTEMBER 2012
www.ti.com
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
Voltage range at VIN, LX
–0.3 to 30
V
Voltage range at LX (maximum withstand voltage transient < 20 ns)
–5 to 30
V
Voltage from BOOT to LX
–0.3 to 7
V
Voltage at VSENSE
–0.3 to 7
V
Voltage at SS
–0.3 to 3
V
Voltage at ROSC
–0.3 to 3
V
Voltage at COMP
–0.3 to 3
V
Voltage at GND
–0.3 to 0.3
V
TJ
Operating junction temperature range
–40 to 125
°C
TSTG
Storage temperature range
–55 to 150
°C
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input operating voltage
3.5
28
V
TA
Ambient temperature
–40
85
°C
THERMAL INFORMATION
TPS5402
THERMAL METRIC(1)
D
UNITS
8 PINS
θJA
Junction-to-ambient thermal resistance(2)
116.7
θJCtop
Junction-to-case (top) thermal resistance(3)
62.4
θJB
Junction-to-board thermal resistance(4)
57.0
°C/W
ψJT
Junction-to-top characterization parameter(5)
14.5
ψJB
Junction-to-board characterization parameter(6)
56.5
θJCbot
Junction-to-case (bottom) thermal resistance(7)
N/A
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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